Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.

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Journal of the American Chemical Society, ISSN: 1520-5126, Vol: 134, Issue: 8, Page: 3804-9

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Kim, Sungwoo; Kim, Taehoon; Kang, Meejae; Kwak, Seong Kwon; Yoo, Tae Wook; Park, Lee Soon; Yang, Ilseung; Hwang, Sunjin; Lee, Jung Eun; Kim, Seong Keun; Kim, Sang-Wook Show More Hide
American Chemical Society (ACS); AMER CHEMICAL SOC
Chemical Engineering; Chemistry; Biochemistry, Genetics and Molecular Biology; In-situ methods; InP; Luminous efficiency; White light emitting diodes
article description
Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K.