Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

Citation data:

Progress in Quantum Electronics, ISSN: 0079-6727, Vol: 49, Page: 1-25

Publication Year:
2016
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Repository URL:
http://hdl.handle.net/10754/622327
DOI:
10.1016/j.pquantelec.2016.08.001
Author(s):
Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau
Publisher(s):
Elsevier BV
Tags:
Physics and Astronomy; Materials Science; Engineering
review description
Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells.