Modulation-Doped In O /ZnO Heterojunction Transistors Processed from Solution.
- Citation data:
Advanced materials (Deerfield Beach, Fla.), ISSN: 1521-4095, Vol: 29, Issue: 19
- Publication Year:
- Xixiang Zhang
- Materials Science; Engineering; Metal oxides; Semiconductors; Solution Processing; Electron Mobility; Thin Film Transistors; Modulation Doping; Heterojunction Transistors
This paper reports the controlled growth of atomically sharp In O /ZnO and In O /Li-doped ZnO (In O /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In O /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In O over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In O /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In O /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.