Modulation-Doped In O /ZnO Heterojunction Transistors Processed from Solution.

Citation data:

Advanced materials (Deerfield Beach, Fla.), ISSN: 1521-4095, Vol: 29, Issue: 19

Publication Year:
2017
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Abstract Views 35
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Citations 17
Citation Indexes 17
Repository URL:
http://hdl.handle.net/10754/623020
PMID:
28295712
DOI:
10.1002/adma.201605837
Author(s):
Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D.
Publisher(s):
Wiley; Wiley-Blackwell
Tags:
Materials Science; Engineering; Metal oxides; Semiconductors; Solution Processing; Electron Mobility; Thin Film Transistors; Modulation Doping; Heterojunction Transistors
article description
This paper reports the controlled growth of atomically sharp In O /ZnO and In O /Li-doped ZnO (In O /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In O /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In O over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In O /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In O /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.