Quantum junction solar cells.

Citation data:

Nano letters, ISSN: 1530-6992, Vol: 12, Issue: 9, Page: 4889-94

Publication Year:
2012
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Citations 137
Citation Indexes 137
Repository URL:
http://hdl.handle.net/10754/599429
PMID:
22881834
DOI:
10.1021/nl302436r
Author(s):
Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.
Publisher(s):
American Chemical Society (ACS)
Tags:
Physics and Astronomy; Chemical Engineering; Chemistry; Materials Science; Engineering; Colloidal quantum dots; homojunction; n-type; PbS; photovoltaics
article description
Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.