Are nanotube architectures more advantageous than nanowire architectures for field effect transistors?

Citation data:

Scientific reports, ISSN: 2045-2322, Vol: 2, Issue: 1, Page: 475

Publication Year:
2012
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Citations 30
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Repository URL:
http://hdl.handle.net/10754/293661
PMID:
22741059
DOI:
10.1038/srep00475
PMCID:
PMC3384075; 3384075
Author(s):
Fahad, Hossain M.; Hussain, Muhammad Mustafa
Publisher(s):
Springer Nature; Nature Publishing Group
Tags:
Multidisciplinary
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article description
Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.