First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

Citation data:

Electronics Letters, ISSN: 0013-5194, Vol: 51, Issue: 14, Page: 1102-1104

Publication Year:
2015
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Repository URL:
http://hdl.handle.net/10754/558571
DOI:
10.1049/el.2015.1658
Author(s):
Majid, Mohammed Abdul; Al-Jabr, Ahmad; Oubei, Hassan M.; Alias, Mohd Sharizal; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.
Publisher(s):
Institution of Engineering and Technology (IET); IET Digital Library
Tags:
Engineering
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article description
The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.