Vacancies and defect levels in III-V semiconductors

Citation data:

Journal of Applied Physics, ISSN: 0021-8979, Vol: 114, Issue: 6

Publication Year:
2013
Usage 103
Abstract Views 65
Full Text Views 34
Downloads 3
Link-outs 1
Captures 43
Readers 37
Exports-Saves 6
Citations 21
Citation Indexes 21
Repository URL:
http://hdl.handle.net/10754/315780
DOI:
10.1063/1.4818484
Author(s):
Tahini, H. A.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlögl, Udo
Publisher(s):
AIP Publishing; American Institute of Physics
Tags:
Physics and Astronomy
article description
Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges (- 3 ≤ q ≤ 3) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to -1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions. © 2013 AIP Publishing LLC.