Electroforming-free resistive switching memory effect in transparent p -type tin monoxide

Citation data:

Applied Physics Letters, ISSN: 0003-6951, Vol: 104, Issue: 15

Publication Year:
2014
Usage 99
Downloads 76
Abstract Views 17
Full Text Views 6
Captures 21
Readers 19
Exports-Saves 2
Citations 15
Citation Indexes 15
Repository URL:
http://hdl.handle.net/10754/552159
DOI:
10.1063/1.4870405
Author(s):
Hota, M. K.; Caraveo-Frescas, J. A.; McLachlan, M. A.; Alshareef, Husam N.
Publisher(s):
AIP Publishing
Tags:
Physics and Astronomy
article description
We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 10?s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials. © 2014 AIP Publishing LLC.