Magnetoresistance of Mn-decorated topological line defects in graphene
- Citation data:
Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 91, Issue: 1
- Publication Year:
- Udo Schwingenschlogl
- Materials Science; Physics and Astronomy
We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.