Magnetoresistance of Mn-decorated topological line defects in graphene

Citation data:

Physical Review B - Condensed Matter and Materials Physics, ISSN: 1550-235X, Vol: 91, Issue: 1

Publication Year:
Usage 72
Downloads 46
Abstract Views 26
Captures 11
Readers 11
Citations 2
Citation Indexes 2
Repository URL:
Obodo, Tobechukwu Joshua; Kahaly, M. Upadhyay; Schwingenschlögl, Udo
American Physical Society (APS); American Physical Society
Materials Science; Physics and Astronomy
article description
We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.