Dielectric properties of PMMA-SiO2 hybrid films

Citation data:

Materials Science Forum, ISSN: 0255-5476, Vol: 644, Page: 25-28

Publication Year:
2010
Usage 20
Abstract Views 20
Citations 6
Citation Indexes 6
Repository URL:
http://hdl.handle.net/10754/564274
DOI:
10.4028/www.scientific.net/msf.644.25
Author(s):
Morales-Acosta, M. D.; Quevedo-López, Manuel Angel Quevedo; Alshareef, Husam N.; Gnade, Bruce E.; Ramírez-Bon, Rafael; Morales-Acosta, M.D.; Quevedo-Lopez, M.A.; Alshareef, H.N.; Gnade, B.; Ramirez-Bon, R.; Morales-Acosta, M.D.; Quevedo-Lopez, M.A.; Alshareef, H.N.; Gnade, B.; Ramirez-Bon, R. Show More Hide
Publisher(s):
Trans Tech Publications
Tags:
Capacitor; Flexible electronics; Hybrid gate dielectric; Hybrid pmma-SiO2; Organic-inorganic materials
conference paper description
Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.