2D Insulator-Metal Transition in Aerosol-Jet-Printed Electrolyte-Gated Indium Oxide Thin Film Transistors

Citation data:

Advanced Electronic Materials, ISSN: 2199-160X, Vol: 3, Issue: 3

Publication Year:
2017
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DOI:
10.1002/aelm.201600369
Author(s):
Wei Xie, Xin Zhang, Chris Leighton, C. Daniel Frisbie
Publisher(s):
Wiley-Blackwell
Tags:
Materials Science
article description
The authors report electronic transport characterization and 2D insulator–metal transition in aerosol-jet-printed, electrolyte-gated In2O3 thin film transistors (TFTs) at electron densities of 1014 cm−2 and mobility of 10 cm2 V−1 s−1, demonstrating the potential for fundamental transport physics as well as maximizing ON current in solution-processed TFTs.

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