PlumX Metrics
Embed PlumX Metrics

Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes

Physica Status Solidi (A) Applications and Materials Science, ISSN: 1862-6319, Vol: 217, Issue: 14
2020
  • 44
    Citations
  • 0
    Usage
  • 35
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    44
    • Citation Indexes
      44
  • Captures
    35

Article Description

Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high-temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated.

Bibliographic Details

Sylvia Hagedorn; Sebastian Walde; Arne Knauer; Daniel Pacak; Carsten Netzel; Anna Mogilatenko; Michael Kneissl; Markus Weyers; Norman Susilo; Tim Wernicke; Leonardo Cancellara; Carsten Hartmann

Wiley

Materials Science; Physics and Astronomy; Engineering

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know