Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes
Physica Status Solidi (A) Applications and Materials Science, ISSN: 1862-6319, Vol: 217, Issue: 14
2020
- 44Citations
- 35Captures
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Article Description
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high-temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated.
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