Programming options for nanocrystal MOS memories
Materials Science and Engineering: C, ISSN: 0928-4931, Vol: 23, Issue: 6, Page: 687-689
2003
- 1Citations
- 3Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
Nanocrystal memories represent a promising candidate for the scaling of FLASH memories. In these devices, the charge is not stored in a continuous floating gate but in a discontinuous layer composed by numerous discrete silicon quantum dots well separated one from the other.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0928493103002078; http://dx.doi.org/10.1016/j.msec.2003.09.111; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0344256509&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0928493103002078; https://api.elsevier.com/content/article/PII:S0928493103002078?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:S0928493103002078?httpAccept=text/plain; https://dx.doi.org/10.1016/j.msec.2003.09.111
Elsevier BV
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