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Thermal annealing effects on morphology and electrical response in ultrathin film organic transistors

Synthetic Metals, ISSN: 0379-6779, Vol: 146, Issue: 3, Page: 373-376
2004
  • 35
    Citations
  • 0
    Usage
  • 39
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    35
    • Citation Indexes
      35
  • Captures
    39

Article Description

Ultra-thin organic film transistors were annealed in vacuum at constant temperature and for different time intervals. This treatment eliminates unintentional doping and reduces hysteresis in I / V curves, both for pentacene and α-sexithienyl, without substantially improving the charge mobility. Devices that originally exhibited high and non-ohmic contact resistance never matched the characteristics of devices with well grown electrode/semiconductor interfaces, even after annealing. Prolonging the annealing time resulted in film rupture due to either re-crystallization or molecular desorption. This process started before healing of molecular disorder at the relevant interfaces could take place.

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