Thermal annealing effects on morphology and electrical response in ultrathin film organic transistors
Synthetic Metals, ISSN: 0379-6779, Vol: 146, Issue: 3, Page: 373-376
2004
- 35Citations
- 39Captures
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Article Description
Ultra-thin organic film transistors were annealed in vacuum at constant temperature and for different time intervals. This treatment eliminates unintentional doping and reduces hysteresis in I / V curves, both for pentacene and α-sexithienyl, without substantially improving the charge mobility. Devices that originally exhibited high and non-ohmic contact resistance never matched the characteristics of devices with well grown electrode/semiconductor interfaces, even after annealing. Prolonging the annealing time resulted in film rupture due to either re-crystallization or molecular desorption. This process started before healing of molecular disorder at the relevant interfaces could take place.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0379677904003248; http://dx.doi.org/10.1016/j.synthmet.2004.08.016; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=9344239927&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0379677904003248; https://api.elsevier.com/content/article/PII:S0379677904003248?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:S0379677904003248?httpAccept=text/plain; https://dx.doi.org/10.1016/j.synthmet.2004.08.016
Elsevier BV
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