Colloidal lithography and Metal-Organic Chemical Vapor Deposition process integration to fabricate ZnO nanohole arrays
Thin Solid Films, ISSN: 0040-6090, Vol: 518, Issue: 16, Page: 4484-4488
2010
- 7Citations
- 12Captures
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Article Description
A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focuses on the determination of the deposition temperature threshold for ZnO Metal-Organic Chemical Vapour Deposition (MOCVD) as well as the concentration of metal-organic silver (Ag) catalyst. Indeed, the optimization of such process parameters allows to tailor the ZnO film morphology in order to make the colloidal lithography/catalyst assisted MOCVD approach a valuable bottom up method to fabricate bi-dimensional ordered ZnO nanohole arrays.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0040609010005134; http://dx.doi.org/10.1016/j.tsf.2010.04.005; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=77955597336&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0040609010005134; https://api.elsevier.com/content/article/PII:S0040609010005134?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:S0040609010005134?httpAccept=text/plain; https://dx.doi.org/10.1016/j.tsf.2010.04.005
Elsevier BV
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