A theoretical study of sulphur adsorption on InP(110)
Surface Science, ISSN: 0039-6028, Vol: 377, Page: 592-596
1997
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Article Description
We have performed ab initio pseudopotential calculations to investigate the bonding and atomic geometry of the SInP(110) system. For a full non-diffused monolayer coverage we find that S atoms form the epitaxially continued layer structure. Among various geometrical possibilities for non-diffused half-monolayer coverage, we find that the S atoms occupy the interchain bridging site. Our results are compared with recent X-ray standing wave measurements.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0039602896014549; http://dx.doi.org/10.1016/s0039-6028(96)01454-9; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0031122748&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0039602896014549; https://api.elsevier.com/content/article/PII:S0039602896014549?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:S0039602896014549?httpAccept=text/plain; http://dx.doi.org/10.1016/s0039-6028%2896%2901454-9; https://dx.doi.org/10.1016/s0039-6028%2896%2901454-9
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