Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure
ACS Applied Materials and Interfaces, ISSN: 1944-8252, Vol: 8, Issue: 40, Page: 26948-26955
2016
- 25Citations
- 23Captures
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Metrics Details
- Citations25
- Citation Indexes25
- 25
- CrossRef18
- Captures23
- Readers23
- 23
Article Description
The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
Bibliographic Details
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