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Hydrogen kinetics on scalable graphene growth by atmospheric pressure chemical vapor deposition with acetylene

Journal of Physical Chemistry C, ISSN: 1932-7447, Vol: 117, Issue: 27, Page: 14348-14353
2013
  • 78
    Citations
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    Usage
  • 108
    Captures
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    Mentions
  • 0
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    78
    • Citation Indexes
      78
  • Captures
    108

Article Description

Acetylene (CH) and copper foil have been chosen as carbon precursor and catalyst, respectively, for the synthesis of graphene by atmospheric pressure chemical vapor deposition. The effects of hydrogen (H ) concentration on graphene growth have been studied by Raman spectroscopy and transmission electron microscopy. Different to methane as a carbon precursor, high-quality bilayer graphene films can be grown rapidly with the ratio of H and argon (Ar) flow rates (H/Ar) range from 0.010 to 0.111. However, with the further increase of H concentration (H/Ar = 0.250 and H/Ar = 0.429), multilayer graphene domains are dominant on top of the bilayer graphene films. These observations demonstrate that H serves as an activator of the surface bound carbon for the bilayer graphene growth, while showing an etching effect that controls the morphology, nucleation density, and nucleation size of the multilayer graphene domains. The results offer useful insights into the understanding of the kinetic effect of H on scalable synthesis of graphene with CH. © 2013 American Chemical Society.

Bibliographic Details

Mei Qi; Zhaoyu Ren; Yixuan Zhou; Xinlong Xu; Weilong Li; Jiayuan Li; Jintao Bai; Yang Jiao; Xinliang Zheng

American Chemical Society (ACS)

Materials Science; Energy; Chemistry

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