Mottness at finite doping and charge instabilities in cuprates
Nature Physics, ISSN: 1745-2481, Vol: 13, Issue: 8, Page: 806-811
2017
- 23Citations
- 74Captures
- 9Mentions
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations23
- Citation Indexes23
- 23
- CrossRef16
- Captures74
- Readers74
- 74
- Mentions9
- News Mentions6
- 6
- Blog Mentions3
- 3
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Article Description
The influence of Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p → Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of lowerature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p
Bibliographic Details
Springer Science and Business Media LLC
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