Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer
Nanoscale, ISSN: 2040-3364, Vol: 5, Issue: 1, Page: 422-428
2013
- 66Citations
- 65Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations66
- Citation Indexes66
- 66
- CrossRef63
- Captures65
- Readers65
- 65
Article Description
Through the one-step plasma oxidation of TiN thin films at room temperature (a simple semiconductor technology compatible method), a partly oxidised structure of titanium oxynitride (TiNO) with a TiO nanolayer on top has been prepared for non-volatile resistive switching memory devices. The fabricated Pt/TiO/TiN O/TiN memory devices demonstrate complementary resistive switching behaviours within an operation voltage of 1 V. The complementary resistive switching behaviours can be explained by redistribution of the oxygen vacancies between the Pt/TiO top interface and the TiO /TiNO bottom interface in the TiO nanolayer. A model concerning the resistive switching mechanism as well as a recover program of a failed device is also proposed. Our work provides a possible cost-efficient solution to suppress the sneak-path problem in nanoscale crossbar memory arrays. © 2013 The Royal Society of Chemistry.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84870940337&origin=inward; http://dx.doi.org/10.1039/c2nr32743k; http://www.ncbi.nlm.nih.gov/pubmed/23187889; http://xlink.rsc.org/?DOI=C2NR32743K; http://pubs.rsc.org/en/content/articlepdf/2013/NR/C2NR32743K; https://xlink.rsc.org/?DOI=C2NR32743K; https://dx.doi.org/10.1039/c2nr32743k; https://pubs.rsc.org/en/content/articlelanding/2013/nr/c2nr32743k
Royal Society of Chemistry (RSC)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know