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Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

Nanoscale, ISSN: 2040-3364, Vol: 5, Issue: 1, Page: 422-428
2013
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Article Description

Through the one-step plasma oxidation of TiN thin films at room temperature (a simple semiconductor technology compatible method), a partly oxidised structure of titanium oxynitride (TiNO) with a TiO nanolayer on top has been prepared for non-volatile resistive switching memory devices. The fabricated Pt/TiO/TiN O/TiN memory devices demonstrate complementary resistive switching behaviours within an operation voltage of 1 V. The complementary resistive switching behaviours can be explained by redistribution of the oxygen vacancies between the Pt/TiO top interface and the TiO /TiNO bottom interface in the TiO nanolayer. A model concerning the resistive switching mechanism as well as a recover program of a failed device is also proposed. Our work provides a possible cost-efficient solution to suppress the sneak-path problem in nanoscale crossbar memory arrays. © 2013 The Royal Society of Chemistry.

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