Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO 3 films

Citation data:

Journal of Materials Chemistry C, ISSN: 2050-7526, Vol: 5, Issue: 23, Page: 5730-5736

Publication Year:
2017
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Abstract Views 1
Citations 5
Citation Indexes 5
DOI:
10.1039/c7tc00190h
Author(s):
Abhinav Prakash, Peng Xu, Xuewang Wu, Greg Haugstad, Xiaojia Wang, Bharat Jalan
Publisher(s):
Royal Society of Chemistry (RSC), The Royal Society of Chemistry
Tags:
Chemistry, Materials Science
article description
High room-Temperature electron mobility and optical transparency in the visible spectrum distinguishes BaSnOfrom other perovskite oxides. The origin of low mobility in thin films as compared to their bulk counterpart is attributed to the presence of dislocations in films with nearly no discussion on the role of point defects such as cation non-stoichiometry. Using high-resolution X-ray diffraction, Rutherford backscattering spectrometry, thermal, and electronic transport measurements, we show that a growth window, in which cation stoichiometry is self-regulating, can be achieved for BaSnOfilms on SrTiO(001) and (LaSr)(AlTa)O(001) (LSAT) substrates using a hybrid molecular beam epitaxy approach. BaSnOfilms on SrTiOgrown within the growth window yielded a mobility value of 105Vsat a density, 2.5 × 100cm. Bulk-like thermal conductivity of 13.3 ± 1.46 W mKwas achieved for stoichiometric films. Both Ba-and Sn-deficient films resulted into charge compensation and low mobility, with a stronger dependence for Sn-deficient films.

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