Monte Carlo analysis of high-field hole diffusion coefficients in nondegenerate GaAs
Applied Physics Letters, ISSN: 0003-6951, Vol: 54, Issue: 24, Page: 2438-2439
1989
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Article Description
We examine the field dependence of the carrier diffusion coefficients in GaAs using an ensemble Monte Carlo technique. An analysis for the field dependence of the hole diffusivity is presented for the first time. Unlike for the electrons, no significant interband transfer effects are observed. The hole diffusivity is seen to decrease monotonically with increasing field.
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