Carrier storage and capture dynamics in quantum-dot heterostructures
Applied Physics Letters, ISSN: 0003-6951, Vol: 82, Issue: 21, Page: 3761-3763
2003
- 15Citations
- 19Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Single dot photoluminescence and ensemble time-resolved photoluminescence was used to demonstrate bias-controlled hole storage and capture in charge-tunable heterostructures. The measurements revealed that by appropriate biasing of the device, about 90% of photogenerated holes can be stored at an interface near to the nanostructures. The capture rate dependence on applied electric field showed that the valence band confinement potential is 'soft' in the capping layer.
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