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Electrical properties of polycrystalline chalcopyrite AgInS films

Journal of Applied Physics, ISSN: 0021-8979, Vol: 71, Issue: 7, Page: 3414-3418
1992
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Metrics Details

  • Citations
    36
    • Citation Indexes
      36
  • Captures
    13

Article Description

Polycrystalline chalcopyrite AgInS films 2.0-3.5 μm thick have been formed on glass substrates. Resistivities, carrier concentrations, and Hall mobilities are measured at room temperature. These quantities are shown to be changed greatly by annealing under maximum S pressure for 1 h at different temperatures. Resistivities of 1-10 Ω cm and carrier concentrations of 2×10-3×10 cm are obtained in n-type films. In p-type films, resistivities are found to be higher than 1×10 Ω cm, and carrier concentrations are less than 3×10 cm. The effects of vacancies and interstitials of Ag, In, and S atoms are discussed to explain the observed changes in the electrical properties of the films. Owing to various structural imperfections, Hall mobilities are found to be less than 2 cm/V s in both n- and p-type films. Au-p-type AgInS Schottky diodes have been fabricated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics are measured at room temperature. The ideality factor is evaluated as about 1.63. In the frequency range 10 -1 MHz, large frequency dispersion is observed in the C-V curves, and explained in terms of the response of deep defect levels.

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