Interaction of nonuniform elastic waves with two-dimensional electrons in AlGaAs-GaAs-AlGaAs heterostructures

The interaction of a double-layer electron system in a AlGaAs-GaAs-AlGaAs heterostructure with nonuniform elastic modes localized in the GaAs layer is considered. The dependence of the interaction constant on the ratio between the thickness of the GaAs layer and the wavelength is calculated in a system with interfaces parallel to the (001) plane for waves with the wave vector directed along the [110] axis, the polarization vector lying in the (110) plane. It is shown that the interaction constant attains its maximum value for the wavelength of the order of the thickness of the GaAs layer. The renormalization of the velocity of elastic waves is found for the case when the electron system is under the conditions of the fractional quantum Hall effect. It is shown that for some modes, the dependence of the velocity renormalization on the wave vector is modified qualitatively upon a transition of the electron system to a state corresponding to the Halperin wave function. © 1999 American Institute of Physics.