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Apparatus for real-time measurement of stress in thin films at elevated temperatures

Chinese Physics Letters, ISSN: 0256-307X, Vol: 20, Issue: 8, Page: 1387-1389
2003
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Article Description

As a prerequisite of biaxial zero creep experiments, a novel sensitive apparatus is developed for real-time film-stress measurement during thermal cycles. The optical sensor with a fixed multi-beam emitter and a CCD detector is investigated during an annealing process of Ag/Co multilayer thin film. The monitoring plots of stress as functions of temperature and time demonstrate the capability of this set-up. The typical sensitivity for measuring the wafer curvature radius is 2 km.

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