Apparatus for real-time measurement of stress in thin films at elevated temperatures
Chinese Physics Letters, ISSN: 0256-307X, Vol: 20, Issue: 8, Page: 1387-1389
2003
- 3Citations
- 1Captures
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Article Description
As a prerequisite of biaxial zero creep experiments, a novel sensitive apparatus is developed for real-time film-stress measurement during thermal cycles. The optical sensor with a fixed multi-beam emitter and a CCD detector is investigated during an annealing process of Ag/Co multilayer thin film. The monitoring plots of stress as functions of temperature and time demonstrate the capability of this set-up. The typical sensitivity for measuring the wafer curvature radius is 2 km.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0042024827&origin=inward; http://dx.doi.org/10.1088/0256-307x/20/8/360; https://iopscience.iop.org/article/10.1088/0256-307X/20/8/360; http://sciencechina.cn/gw.jsp?action=cited_outline.jsp&type=1&id=1268769&internal_id=1268769&from=elsevier; https://dx.doi.org/10.1088/0256-307x/20/8/360; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=77868a01-85b1-484e-ae52-a4054c58db4b&ssb=80777257285&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1088%2F0256-307X%2F20%2F8%2F360&ssi=51d7c8fc-cnvj-4aa7-b858-abb06c309d97&ssk=botmanager_support@radware.com&ssm=010214537000766303755952596078035711&ssn=efdfa669598f39b9bc6bfc6939cf4ad7608d0900c3c4-8990-4f21-a43e23&sso=9c1f6f8c-bc564dd29dea33d8f58574f626838fb665c2435f93aa5c11&ssp=90059805401726562944172670844664976&ssq=06131969251388368322629239630142542632006&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJ1em14IjoiN2Y5MDAwMGMxZDc2YmItMzk2MS00N2VjLTlkZGItNjdmYTVhZTY2ODdlNS0xNzI2NTI5MjM5NDUzMjYzMjc0NDcwLTk4Y2JhNmZkNzU3ZDMyNjMzNzU0OTAiLCJfX3V6bWYiOiI3ZjYwMDBkNzYzNGE3Ni05ZTRkLTRjMmMtYjJhMC1mYzAzNGMyZjE1MjkxNzI2NTI5MjM5NDUzMjYzMjc0NDcwLWQ2MmE5YTU5NWNlMjViNjMzNzU1MTEiLCJyZCI6ImlvcC5vcmcifQ==
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