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Tunable long-wavelength broad band asymmetric quantum well infrared photodetector

Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 22, Issue: 4, Page: 422-426
2007
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Article Description

We present a theoretical investigation of a GaAs/AlGaAs infrared detector consisting of three asymmetric quantum wells. Each well is designed to yield absorption and a photoresponse at peak wavelengths of 8.2 νm, 9.5 νm and 10.8 νm respectively. The device operation is based on an intersubband bound to quasi-bound transition. Asymmetry in the barriers is shown to give rise to the dependence of the spectral line width on applied reverse bias. © 2007 IOP Publishing Ltd.

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