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The α and γ plasma modes in plasma-enhanced atomic layer deposition with O-N capacitive discharges

Journal of Physics D: Applied Physics, ISSN: 1361-6463, Vol: 50, Issue: 9
2017
  • 8
    Citations
  • 0
    Usage
  • 22
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    8
    • Citation Indexes
      8
  • Captures
    22

Article Description

Two distinguishable plasma modes in the O-N radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In remote CCP operations the transition to the γ mode can result in a parasitic discharge leading to uncontrollable film growth and thus limit the operation parameters of the capacitive discharge in the PEALD applications.

Bibliographic Details

M. Napari; O. Tarvainen; S. Kinnunen; K. Arstila; J. Julin; T. Sajavaara; S. Fjellvåg; K. Weibye; O. Nilsen

IOP Publishing

Materials Science; Physics and Astronomy

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