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Commutativity and transitivity of GaAs-AlAs-Ge(100) band offsets

Physical Review B, ISSN: 0163-1829, Vol: 33, Issue: 2, Page: 1106-1109
1986
  • 62
    Citations
  • 0
    Usage
  • 6
    Captures
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    Mentions
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    62
    • Citation Indexes
      62
  • Captures
    6

Article Description

X-ray photoemission spectroscopy is used to measure the valence-band offset Ev for in situ molecular-beam-epitaxygrown heterojunctions involving AlAs, GaAs, and Ge. Commutativity is found by the equivalence of the Al(2p)-Ga(3d) energy separation (54.65±0.05 eV) for the AlAs-GaAs(100) junction independent of the growth sequence. Transitivity is satisfied by the zero (0.05±0.15 eV) sum of the core-energy separations for AlAs/Ge, GaAs/AlAs, and GaAs/Ge junctions. The band offsets for GaAs-AlAs are more evenly divided between valence and conduction band than the conventional 1585 % distribution, respectively. © 1986 The American Physical Society.

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