Commutativity and transitivity of GaAs-AlAs-Ge(100) band offsets
Physical Review B, ISSN: 0163-1829, Vol: 33, Issue: 2, Page: 1106-1109
1986
- 62Citations
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Article Description
X-ray photoemission spectroscopy is used to measure the valence-band offset Ev for in situ molecular-beam-epitaxygrown heterojunctions involving AlAs, GaAs, and Ge. Commutativity is found by the equivalence of the Al(2p)-Ga(3d) energy separation (54.65±0.05 eV) for the AlAs-GaAs(100) junction independent of the growth sequence. Transitivity is satisfied by the zero (0.05±0.15 eV) sum of the core-energy separations for AlAs/Ge, GaAs/AlAs, and GaAs/Ge junctions. The band offsets for GaAs-AlAs are more evenly divided between valence and conduction band than the conventional 1585 % distribution, respectively. © 1986 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0007794760&origin=inward; http://dx.doi.org/10.1103/physrevb.33.1106; http://www.ncbi.nlm.nih.gov/pubmed/9938376; https://link.aps.org/doi/10.1103/PhysRevB.33.1106; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.1106/fulltext; http://link.aps.org/article/10.1103/PhysRevB.33.1106
American Physical Society (APS)
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