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Infrared response of silicon oxynitrides investigated by high-resolution electron-energy-loss spectroscopy

Physical Review B, ISSN: 0163-1829, Vol: 48, Issue: 12, Page: 8701-8708
1993
  • 12
    Citations
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  • 1
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    1

Article Description

Silicon oxynitride films of various compositions were grown in situ by RF-plasma sputtering. The high-resolution electron-energy-loss spectra were analyzed in the framework of the dielectric theory after addition of a characteristic background structure. The evolution of the energy-loss peaks as a function of [N]/([N]+[O]) concentration ratio clearly exhibits a one-mode behavior. This suggests that sili- con oxynitride is characterized by a mixture of Si-O and Si-N bonds at the atomic level. An exponential frequency shift of the main peak is observed as a function of the concentration ratio. Infrared optical parameter values are provided for thermal and RF-plasma sputtered oxides, and for two compositions of RF-plasma SiOxNy[y/(y+x)=0.37 and 0.80] silicon oxynitrides. © 1993 The American Physical Society.

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