Numerical Analysis of the Gate Voltage Dependence of the Series Resistances and Effective Channel Length in Submicrometer GaAs MESFET’s
IEEE Transactions on Electron Devices, ISSN: 1557-9646, Vol: 39, Issue: 9, Page: 2015-2020
1992
- 13Citations
- 4Captures
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Article Description
This paper presents a detailed numerical analysis of the source and drain parasitic resistances and effective channel length of state-of-the-art GaAs MESFET’s. Two-dimensional simulations are used to evaluate different criteria (physical and electrical) for defining the device parameters of interest, as well as to study their gate voltage dependence. To this purpose a novel criterion is also proposed, which provides a simple procedure to determine the series resistances as a function of gate bias. © 1992 IEEE
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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