An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications
ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings, Page: 373-376
2022
- 4Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations4
- Citation Indexes4
Conference Paper Description
This paper presents a temperature-robust embedded Phase-Change Memory (ePCM) with high cycling capability able to meet all the stringent specifications coming from the automotive environment and, more specifically, the used phase-change material (based on Ge-rich GST alloy) has been tuned to fit power ICs constraints. In order, to cope with the -40 °C to 175 °C operation requirements, a temperature-compensated write algorithm was conceived and specific circuits were added to render the statistical distribution of programming pulses equal at any temperature as it is required to obtain a uniform ageing of the cells thus ensuring an higher reliability after 100k cycling. Programming operation was optimized thanks to an improved program load that has been designed to compensate for the expected large power supply variations. Experimental characterization demonstrated a 16 ns access time over the whole temperature range.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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