Carrier quantization in SOI MOSFETs using an effective potential based Monte-Carlo tool
European Solid-State Device Research Conference, ISSN: 1930-8876, Page: 407-410
2003
- 14Citations
- 8Captures
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Conference Paper Description
This paper discusses the numerical implementation and assesses the validity limits of the effective potential approach used to include quantum mechanical effects in semi-classical full-band Monte Carlo simulations. Results on thin-body fully-depleted SOI MOSFETs are reported. It is shown that the model grasps with reasonable accuracy the quantum mechanical reduction of the inversion charge, but fails to provide an accurate description of the charge distribution in the proximity of the Si/SiO barrier.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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