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Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

IEEE Journal of Quantum Electronics, ISSN: 0018-9197, Vol: 40, Issue: 7, Page: 878-883
2004
  • 27
    Citations
  • 0
    Usage
  • 5
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    27
    • Citation Indexes
      27
  • Captures
    5

Article Description

We report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported. © 2004 IEEE.

Bibliographic Details

Antony H. Clark; Stephane Calvez; N. Laurand; H. D. Sun; M. D. Dawson; Roberto Macaluso; Tomi Jouhti; Janne Kontinnen; Markus Pessa

Institute of Electrical and Electronics Engineers (IEEE)

Physics and Astronomy; Engineering

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