Low frequency noise in submicron Graded-Channel SOI MOSFETs
Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Page: 1-4
2013
- 3Citations
- 4Captures
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Conference Paper Description
The origin of the low-frequency noise in submicron fully depleted Graded-Channel (GC) SOI MOSFET is investigated in terms of the channel length comparing two different technologies, OKI semiconductors and UCL. © 2013 IEEE.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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