Study of growth parameters on the well-oriented InAlN using sputtering on Si (100) substrate
2021 9th International Symposium on Next Generation Electronics, ISNE 2021, Page: 1-3
2021
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Conference Paper Description
InxAl1-xN is beneficial for developing full-spectrum devices. The influence of growth parameters including reaction gas ratio, reaction pressure and growth temperature on InxAl1-xN layers is investigated. We find the growth parameter of well-oriented film is 18sccm N2 flow rate with 1:3 gas ration, 1Pa pressure and 200. The In0.6Al0.4N film device is fabricated with significant photo-respond and stable current. The saturation time is measured about 0.8∼1.0s. Our work is meaningful for improving the photovoltaic properties of InxAl1-xN devices in the future.
Bibliographic Details
Institute of Electrical and Electronics Engineers (IEEE)
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