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Silicide formation during heat treatment of thin Ni-Pt and Ni-Pd solid-solution films and Pt/Ni bilayers on (111)Si

Inorganic Materials, ISSN: 0020-1685, Vol: 42, Issue: 2, Page: 151-159
2006
  • 11
    Citations
  • 0
    Usage
  • 5
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    11
    • Citation Indexes
      11
  • Captures
    5

Article Description

It is shown that isothermal heat treatment of (Ni-Pt)/Si and Pt/Ni/Si heterostructures leads to the formation of oriented Ni- and Pt-based silicide solid solutions. Owing to the three equivalent azimuth orientations in the basic lattice orientation relationship for the Si-Ni Pt Si system, the resulting silicides have a nanocrystalline substructure. The stability of the substructure is due to the optimal interfacial lattice match and near-special grain-boundary misorientations. The silicide phases Ni Pt Si and Pt Ni Si (or Ni Pd Si and Pd Ni Si) may undergo segregation, having the same lattice orientation. In both systems, the segregation is associated with the predominant Ni diffusion. The second component (Pt) is shown to stabilize the orthorhombic Ni-based silicide and to prevent NiSi formation. Photon processing accelerates diffusion and leads to the formation of phase-pure Ni Pt Si solid solutions. © Pleiades Publishing, Inc., 2006.

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