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Transport in novel gated quantum wires: The impact of wire length

Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 29, Issue: 12, Page: 2257-2260
1990
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Metrics Details

  • Citations
    11
    • Citation Indexes
      11

Article Description

Split-gate quantum wires of various lengths including 0.0 p, m (constrictions), 0.5 p, m, and 1.0 p, m have been fabricated on an AIGaAs/GaAs modulation-doped heterostructure. Confinement is achieved using a split-gate formed by two 40 nm Au/Pd lines, resulting in small gate leakage and short electron-beam writing times. In a two-probe measurement, we have observed strong conductance steps at 4.2 Kin 0.5 p, m long split-gate quantum wires. These features, which are characteristic of near ballistic electron transport through the wire, are present at temperatures as high as 10 K. Transport through the 0.0 p, m constrictions was dominated by tunneling and transport in the 1.0 p, m long wires was of a diffusive nature. © 1990 The Japan Society of Applied Physics.

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