PlumX Metrics
Embed PlumX Metrics

(110) Substrates for ZnSe on GaAs heteroepitaxy

Japanese Journal of Applied Physics, Part 2: Letters, ISSN: 0021-4922, Vol: 36, Issue: 1 PART A/B
1997
  • 10
    Citations
  • 0
    Usage
  • 1
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    10
    • Citation Indexes
      10
  • Captures
    1

Article Description

In this letter we present definitive evidence that the ZnSe epitaxial layer grows far better on GaAs(110) that on conventional GaAs(100) substrates. This evidence was derived from channeling measurements of 2 MeV He ions along major crystalline directions; the ZnSe on GaAs(100) system exhibited a large interface disorder peak in channeling backscattering spectra, whereas the ZnSe on GaAs(110) system gave smooth and featureless spectra. We deduce the quantitative interface disorder from the result of the measurements, and discuss a possible correlation between the interface structure and the charge neutralization problem of this heteroepitaxial system.

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know