Monte Carlo and hydrodynamic simulation of a one dimensional n-n- N silicon diode
VLSI Design, ISSN: 1065-514X, Vol: 6, Issue: 1-4, Page: 247-250
1998
- 19Citations
- 4Captures
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Article Description
An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the "benchmark" n- n - n submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.
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