New Bithiophene Extended IDIC-Based Non-fullerene Acceptors and Organic Photovoltaics Thereof
Molecules, ISSN: 1420-3049, Vol: 27, Issue: 3
2022
- 1Citations
- 3Captures
- 1Mentions
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Metrics Details
- Citations1
- Citation Indexes1
- CrossRef1
- Captures3
- Readers3
- Mentions1
- Blog Mentions1
- Blog1
Article Description
We developed new bithiophene extended electron acceptors based on m-alkoxythenyl-substituted IDIC with three different end groups, named as IDT-BT-IC, IDT-BT-IC4F, and IDT-BT-IC4Cl, respectively. The ultraviolet absorption maximum was redshifted and the bandgap was de-creased as the strong electron accepting ability of the end group increased. A differential scanning calorimetry thermogram analysis revealed that all the new acceptors have a crystalline character. Using these acceptors and a bulk heterojunction structure using PBDB-T, inverted organic photo-voltaic (OPV) devices were fabricated, and their performance was analyzed. Due to the red shift of the electron acceptors, the OPV active layer particularly, which was derived from IDT-BT-IC4F, exhibited increased absorption at long wavelengths over 800 nm. The OPV prepared using IDT-BT-IC exhibited a short-circuit current density (Jsc) of 2.30 mA/cm, an open-circuit voltage (Voc) of 0.95 V, a fill factor (FF) of 45%, and a photocurrent efficiency (PCE) of 1.00%. Using IDT-BT-IC4F, the corresponding OPV device showed Jsc = 8.31 mA/cm, Voc = 0.86 V, FF = 47%, and PCE = 3.37%. The IDT-BT-IC4Cl-derived OPV had Jsc = 3.00 mA/cm, Voc = 0.89 V, FF = 29%, and PCE = 0.76%. When IDT-BT-IC4F was used as the electron acceptor, the highest Jsc and PCE values were achieved. The results show that the low average roughness (0.263 nm) of the active layer improves the extraction of electrons.
Bibliographic Details
MDPI AG
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