Safe Thermal Operation of Power Transistors Under Pulsed Excitation

Publication Year:
1958
Usage 1
Abstract Views 1
Repository URL:
http://digitalrepository.unm.edu/ece_etds/384
Author(s):
Swain, George R.
Tags:
Electrical and Computer Engineering
thesis / dissertation description
One desires to find the relationship between thermal stability and such factors as temperature within the transistor, power dissipation in the transistor junctions, collector saturation current, and thermal resistance. In the approach set forth in this paper, the theory of solid state heat flow is applied to a simplified thermal model of a power transistor.