Transition mechanisms of two interacting DX centers in N-type AlGaAs using reverse-bias deep level transient spectroscopy and temperature-dependent pulse-width reverse-bias deep level transient spectroscopy methods

Citation data:

Journal of Applied Physics, ISSN: 0021-8979, Vol: 74, Issue: 6, Page: 3921-3926

Publication Year:
1993
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Citations 2
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Repository URL:
http://scholarsmine.mst.edu/ele_comeng_facwork/3340
DOI:
10.1063/1.354491
Author(s):
Wang, C. W.; Wu, Cheng-Hsiao
Publisher(s):
AIP Publishing; American Institute of Physics (AIP)
Tags:
Physics and Astronomy; Electrical and Computer Engineering
article description
The reverse-bias pulsed deep level transient spectroscopy (RDLTS) and a new temperature-dependent pulse-width RDLTS (TDP RDLTS) technique are reported to study the electric-field effect on carrier emission rates and the direct interaction between double DX centers recently detected in the Se:Al GaAs N confinement layer of the AlGaAs/GaAs single-quantum-well laser diodes. Traditional RDLTS measurements, with constant pulse width t, prove that the two DX centers, Et and Et, have strong direct emission interaction. Furthermore, the new TDP-RDLTS technique enables one to evaluate this direct transition time constant. Possible mechanisms for this interstate transition at different temperature ranges are provided and the new broadening effect due to this interstate transition is also reported here for the first time. Field-enhanced emission rates are calculated.