Capacitive Properties and Structure of RuO2-HfO2 Films Prepared by Thermal Decomposition Method

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Physics Procedia, ISSN: 1875-3892, Vol: 50, Page: 416-420

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Liu, Xuehua; Zhu, Junqiu; Wang, Xin; Sun, Jinghua; Tang, Zhongzhi; Zhang, Teng; O'Keefe, Matthew; Tang, Dian
Elsevier BV
Physics and Astronomy; Film; RuO2-HfO2; Supercapacitor; Thermal decomposition method; Film; RuO2-HfO2; Supercapacitor; Thermal decomposition method; Materials Science and Engineering
article description
Binary RuO2-HfO2 films on Ti substrates were prepared by a thermal decomposition method. cyclic voltammetric and charge/discharge properties of the RuO2-HfO2 electrodes were characterized. It was determined that the incorporation of HfO2 into RuO 2 greatly improved the capacitive properties of the material. The RuO 2 -HfO 2 electrodes showed excellent cyclic stability, with no decay in charge capability during 1000 CV cycles in acidic solution. A nominal content of 50 mol% RuO 2 and 50 mol% HfO 2 gave the highest specific capacitance of 789.3 F/g (RuO 2 ). The excellent capacitive properties and stability were related to the hydrous amorphous mixed-oxides formed in the film. This work proves that high capacitive performance of RuO2-based electrode materials can be obtained by thermal decomposition, even with the retained chloride in the film.