Relation between charge-dipole interactions and the sqrt(E)-dependent mobility in molecularly doped polymers

Citation data:

Proceedings of SPIE - The International Society for Optical Engineering, Vol: 2850, Page: 139-146

Publication Year:
1996
Usage 4
Downloads 4
Citations 1
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Repository URL:
http://scholarsmine.mst.edu/phys_facwork/1379
DOI:
10.1117/12.254238
Author(s):
Paul E. Parris; Stephen Ducharme; James W. Stasiak
Publisher(s):
SPIE-Intl Soc Optical Eng; SPIE--The International Society for Optical Engineering
Tags:
Carrier mobility; Charge dipole interactions; Energetic disorder; Molecularly-doped polymers; Time-of-flight measurements; Doping (additives); Electric field effects; Mathematical models; Order disorder transitions; Organic polymers; Transport properties; Xerography; Carrier mobility; Charge dipole interactions; Energetic disorder; Molecularly-doped polymers; Time-of-flight measurements; Doping (additives); Electric field effects; Mathematical models; Order disorder transitions; Organic polymers; Transport properties; Xerography; Physics
conference paper description
Time-of-flight measurements on a wide variety of molecularly-doped polymers reveal carrier mobilities that exhibit an exponential dependence on the square root of the applied electric field. Recent attempts to explain the observed field dependence have focused on the role played by spatial and energetic disorder. It as also been conjectured that the charge-dipole interactions often identified as the source of energetic disorder could be of sufficient range to lead to correlations in the energies of neighboring hopping sites. We have analytically explored the effect of such correlations on high field carrier transport in random potentials, and discuss how particular features of the correlations associated with charge-dipole interactions might lead to behavior similar to that seen in experiment.