Preferential Silicon Site Occupation in YFeSiB

Citation data:

IEEE Transactions on Magnetics, ISSN: 1941-0069, Vol: 29, Issue: 6, Page: 2764-2766

Publication Year:
1993
Usage 10
Downloads 7
Abstract Views 3
Citations 5
Citation Indexes 5
Repository URL:
http://scholarsmine.mst.edu/phys_facwork/308
DOI:
10.1109/20.281021
Author(s):
Marasinghe, Gaya Kanishka; Pringle, Oran Allan; Long, Gary J.; Grandjean, Fernande; Yelon, William B.
Publisher(s):
Institute of Electrical and Electronics Engineers (IEEE)
Tags:
Engineering; Materials Science; Physics and Astronomy; Composition effects; Electron energy levels; Magnetic field effects; Magnetic properties; Mössbauer spectroscopy; Neutron diffraction; Silicon; Spectrum analysis; Structure (composition); X ray analysis; Curie temperature; Mössbauer effect; Preferential silicon site occupation; Yttrium compounds; Composition effects; Electron energy levels; Magnetic field effects; Magnetic properties; Mössbauer spectroscopy; Neutron diffraction; Silicon; Spectrum analysis; Structure (composition); X ray analysis; Curie temperature; Mössbauer effect; Preferential silicon site occupation; Yttrium compounds; Chemistry; Physics
article description
Neutron-diffraction and Mössbauer effect studies of YFeSiB, where x is 0.28, 0.67, and 1.87, show that silicon preferentially occupies the 4c site in the RFeB structure. If the breaking of short iron-iron bonds is the mechanism for the increase in the Curie temperature of RFeSiB, then the bonds most responsible for the increase are those between iron atoms on the 16kand 4c sites. © 1993 IEEE