Fabrication of Hybrid n -ZnMgO/ n -ZnO/ p -AlGaN/ p -GaN Light-Emitting Diodes
- Citation data:
Japanese Journal of Applied Physics, ISSN: 0021-4922, Vol: 44, Issue: 10, Page: 7296-7300
- Publication Year:
- Repository URL:
- http://stars.library.ucf.edu/facultybib/8013; http://stars.library.ucf.edu/facultybib2000/5798
- Engineering; Physics and Astronomy; ZnO; GaN; UV emitter; light-emitting diodes (LEDs); heterostructure; MOLECULAR-BEAM EPITAXY; P-TYPE ZNO; THIN-FILMS; GROWTH; SAPPHIRE; POLARITY; DEPOSITION; TEMPLATES; MGXZN1-XO; EPILAYERS; Physics; Applied
We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices. © 2005 The Japan Society of Applied Physics.