Fabrication of Hybrid n -ZnMgO/ n -ZnO/ p -AlGaN/ p -GaN Light-Emitting Diodes

Citation data:

Japanese Journal of Applied Physics, ISSN: 0021-4922, Vol: 44, Issue: 10, Page: 7296-7300

Publication Year:
2005
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Citations 34
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Repository URL:
http://stars.library.ucf.edu/facultybib/8013; http://stars.library.ucf.edu/facultybib2000/5798
DOI:
10.1143/jjap.44.7296
Author(s):
Hyuck Soo Yang; Sang Youn Han; Y. W. Heo; K. H. Baik; D. P. Norton; S. J. Pearton; F. Ren; A. Osinsky; J. W. Dong; B. Hertog; A. M. Dabiran; P. P. Chow; L. Chernyak; T. Steiner; C. J. Kao; G. C. Chi Show More Hide
Publisher(s):
Japan Society of Applied Physics
Tags:
Engineering; Physics and Astronomy; ZnO; GaN; UV emitter; light-emitting diodes (LEDs); heterostructure; MOLECULAR-BEAM EPITAXY; P-TYPE ZNO; THIN-FILMS; GROWTH; SAPPHIRE; POLARITY; DEPOSITION; TEMPLATES; MGXZN1-XO; EPILAYERS; Physics; Applied
article description
We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices. © 2005 The Japan Society of Applied Physics.