Global Solutions of the Time-Dependent Drift-Diffusion Semiconductor Equations
Journal of Differential Equations, ISSN: 0022-0396, Vol: 123, Issue: 2, Page: 523-566
1995
- 52Citations
- 8Usage
- 6Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations52
- Citation Indexes52
- 52
- CrossRef35
- Usage8
- Abstract Views8
- Captures6
- Readers6
Article Description
In this paper, we study the global behavior of the time dependent drift -diffusionmodel for semiconductor devices. Under certain assumptions on the mobilities, wcfirst prove the existence of the global weak solutions with uniform L bounds.Then we show that the system, when considered as a dynamical system, possessesan absorbing set with respect to the L′topology. © 1995 by Academic Press, Inc.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0022039685711722; http://dx.doi.org/10.1006/jdeq.1995.1172; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0002854786&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0022039685711722; https://api.elsevier.com/content/article/PII:S0022039685711722?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:S0022039685711722?httpAccept=text/plain; https://corescholar.libraries.wright.edu/math/454; https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1457&context=math; https://dx.doi.org/10.1006/jdeq.1995.1172
Elsevier BV
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know