Photoquenching and thermal recovery of a thermally stimulated current peak in semi-insulating GaAs
Journal of Applied Physics, ISSN: 0021-8979, Vol: 73, Issue: 10, Page: 4971-4974
1993
- 14Citations
- 205Usage
- 3Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations14
- Citation Indexes14
- CrossRef14
- 14
- Usage205
- Downloads202
- Abstract Views3
- Captures3
- Readers3
Article Description
A prominent thermally stimulated current peak T appearing in semi-insulating GaAs is shown to photoquench under infrared illumination, and then thermally recover at a rate r=2.0×10 exp(-0.26 eV/kT) s, exactly the same as that observed for EL2, within experimental error. Two possible explanations exist: (1) T and EL2 are microscopically very similar, probably each with an As core; or (2) T is an electron trap that only appears to quench and recover with EL2 because EL2 controls the electron lifetime. Several other traps show similar quenching and recovery behavior.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=5544224959&origin=inward; http://dx.doi.org/10.1063/1.353816; https://pubs.aip.org/jap/article/73/10/4971/509163/Photoquenching-and-thermal-recovery-of-a-thermally; https://corescholar.libraries.wright.edu/physics/125; https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1170&context=physics
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