Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band
Physical Review B, ISSN: 0163-1829, Vol: 42, Issue: 6, Page: 3578-3581
1990
- 263Citations
- 479Usage
- 53Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations263
- Citation Indexes263
- 263
- CrossRef243
- Usage479
- Downloads474
- Abstract Views5
- Captures53
- Readers53
- 53
Article Description
Molecular-beam-epitaxial GaAs grown at very low temperatures (200°C) exhibits anomalous Hall-effect properties. Here we show conclusively that the room-temperature conduction is due to activated (nearest-neighbor) hopping in a deep defect band of concentration 3×1019 cm-3, and energy Ec-0.75 eV, along with conduction due to free carriers thermally excited from this band. At low measurement temperatures, variable-range hopping [exp(-T0/T)1/4] prevails. The conduction-band mobility can be well explained by neutral-deep-donor scattering in parallel with lattice scattering. © 1990 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0001580740&origin=inward; http://dx.doi.org/10.1103/physrevb.42.3578; http://www.ncbi.nlm.nih.gov/pubmed/9995870; https://link.aps.org/doi/10.1103/PhysRevB.42.3578; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.3578/fulltext; http://link.aps.org/article/10.1103/PhysRevB.42.3578; https://corescholar.libraries.wright.edu/physics/189; https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1234&context=physics
American Physical Society (APS)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know